New trends in power semiconductor modules (Figure)

Summary:

The development process of power semiconductor module is briefly described. The structure and characteristics of thyristor intelligent module are introduced. The status quo and development trend of IGBT intelligent module are described. The necessity of developing IPEM in China is pointed out.

Keywords : power semiconductor module; intelligent thyristor module; IGBT module; IGBT intelligent module

introduction

The birth of a new type of device often makes a huge change in the appearance of the entire device system, and promotes the development of power electronics technology. Since the first thyristor was introduced in 1957, after more than 40 years of development and research, more than 40 kinds of power semiconductor devices such as turn-off thyristors (GTO) and insulated gate bipolar transistors (IGBT) have been introduced. The development of power, high power, intelligence and modularity, this article will briefly introduce the trend of modular development.

The so-called module, originally defined is the combination of two or more power semiconductor chips in a certain circuit, with RTV, elastic silicone gel, epoxy resin and other protective materials, sealed in an insulated casing, and with the heat-conducting bottom plate Insulated. Since the 1970s, Semikron Nurmbeg introduced the principle of modules (then limited to thyristors and rectifier diodes) into the field of power electronics. Therefore, modularization has been valued by power semiconductor companies all over the world, developing and producing various forms of internal electrical connections. Power semiconductor modules such as thyristors, rectifier diodes, triacs, reverse thyristors, light-controlled thyristors, turn-off thyristors, power transistors (GTR), MOS controllable thyristors (MCTs), power MOSFETs, and insulated gate bipolar transistors ( Modules such as IGBT) have enabled module technology to flourish and account for a growing proportion of devices.

According to statistics from the United States in the early 1990s, in the past decade or so, the market share of discrete thyristors, rectifier diodes, and Darlington transistors above 20A has dropped from 90% to 20%, while the modules of the above devices are 10% rose to 80%, showing that the module is growing fast.

With the success of the development of modern semiconductor devices based on MOS structure, namely the development of voltage control, small driving power, simple control IGBT, power MOSFET, MOS control thyristor (MCT) and MOC control rectifier (MCD), development An intelligent power semiconductor module that combines a device chip with a control circuit, a drive circuit, an overvoltage, an overcurrent, an overheat and undervoltage protection circuit, and a self-diagnostic circuit, and is sealed in the same insulative housing, that is, an IPM.

In order to further improve the reliability of the system and adapt to the development of high-frequency, miniaturization and modularization of power electronics technology, some manufacturers add some inverter functions based on IPM, and the inverter circuit (IC) All devices are packaged in a module in a chip form, which becomes a user-specific power module (ASPM), so that no traditional leads are connected, and the internal wires are connected by ultrasonic welding, thermocompression bonding or crimping. The parasitic inductance is minimized, which is beneficial to the high frequency of the device. A 7.5KW motor frequency conversion device, in which ASPM is only 600×400×250 (mm), and it is gratifying that this kind of user-specific power module can be redesigned according to the application circuit. Application flexibility. However, it is technically difficult to integrate an integrated circuit IC having a logic level of several volts and several milliamps with a power semiconductor device of several hundred amps or several thousand volts on the same chip. Although ASPMs below 1.5KW are currently available for sale, high-power ASPMs still need to solve a series of problems, forcing people to use hybrid package form to manufacture integrated power electronic modules (IPEM) for various occasions. IPEM has opened up new avenues for the development of power electronics technology in the new century.

Smart thyristor module

Thyristor and rectifier diode modules mainly refer to various bridged arm modules and single-phase rectifier bridge modules. After nearly 30 years of development and production of thyristor modules, the technology for manufacturing such series modules is quite mature, and the production yield is also quite high. High, the use is also very common and mature, has become an important device for power regulation, so it will not be introduced here.

The thyristor intelligent module is the ITPM ​​(Intelligent thyristor power module) which is formed by enclosing the main circuit of the thyristor with the phase shift trigger system and the overcurrent and overvoltage protection sensors in a plastic casing. Since the thyristor is a current-controlled power semiconductor device, a large pulse trigger power is required to drive the thyristor, and other auxiliary circuit components, such as a synchronous current synchronous transformer, are bulky, and it is difficult to make the phase shift trigger system and The thyristor main circuit and the sensor are packaged in the same housing to form a thyristor intelligent module. Therefore, the world has not escaped the traditional form of discrete fabrication of thyristor devices and gate trigger systems.

Shandong Zibo Linyi Yinhe High-tech Development Co., Ltd., after years of development and research, solved the problem of miniaturization of synchronous components, making it suitable for integrated applications, and then solving the problems of improving signal amplitude, anti-interference, high-voltage isolation and synchronous signal input. And developed a high-density power pulse transformer and multi-channel high-speed high-current IC, as well as two ICs suitable for integrated modules. After adopting DCB board with good thermal conductivity and good insulation performance, molybdenum copper board, special materials such as elastic silicone gel with good electrical insulation and protection performance and good heat conduction, many kinds of thyristor intelligent modules with various functions have been developed, such as Three-phase, single-phase integrated phase-shifting thyristor intelligent AC switch module, three-phase, single-phase AC switch module with zero-crossing trigger circuit.

Figure 1 shows the internal wiring diagram of the thyristor intelligent three-phase bridge module (a) and other external photo (b), as well as the thyristor intelligent motor control module, which solves the thyristor main circuit and phase shift trigger system and protection sampling that have not been realized. The problem of the sensor being packaged together in a plastic housing. Linyi Yinhe Company has developed a module with a maximum working line current of 1600A (RMS) and rated working voltages of 380V and 600V. It has been used in AC frequency conversion, AC/DC electric drive, and three-phase AC solid-state switches and constant voltage and constant current power supplies.

IGBT intelligent module

In the early 1980s, the successful development of IGBT devices and the subsequent improvement and improvement of their rated parameters played an important role in the development of high-frequency, high-power applications. Since IGBT modules have voltage-driven, driving power is small. High switching speed, low saturation voltage and high voltage and high current resistance, showing excellent comprehensive performance, has become the most widely used power semiconductor device in the industrial field. Its hard switching frequency is up to 25KHz and the soft switching frequency is up to 100KHz . The newly developed Thunderbolt type IGBT has a hard switching frequency of up to 150KHz and a resonant inverting soft switching circuit of up to 300KHz .

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