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Now, researchers at the Massachusetts Institute of Technology (MIT) have made major breakthroughs in this area, and are even expected to change some theoretical predictions of graphene physics. They introduced another hexagonal boron nitride with a single atomic thickness and properties similar to graphene, and placed a layer of graphene on it. The resulting hybrid material has both the conductive properties of graphene. Finally, it has the energy gap necessary to build transistors.
Pablo Jarillo-Herrero, assistant professor at the MIT Department of Physics, commented: "By combining two materials, we have obtained a mixture of properties that differ from the two. Graphene is an excellent conductor, and hexagonal boron nitride is a good insulator. Blocking the flow of electrons. Putting them together, we get high quality semiconductors."
But the whole process is obviously not as simple as 1+1=2. Researchers must almost perfectly align the atomic frames of the two materials. Both of them have a hexagonal structure, the size (lattice constant) is almost the same, but the hexagonal boron nitride is 1.8% larger, so the two atomic frames can be perfectly spliced ​​together from the fine point, from a large scale There will still be some differences.
There is currently no perfect solution for this, and the researchers say that they can only rely on obtaining angular alignment, but there is always a chance of about 1/15 error.
Ray Ashoori, a professor at the MIT Department of Physics, said: "The most amazing thing about the resulting semiconductor is that you can adjust the properties of the final material with a slight adjustment of the angle between the layer of material and the other layers to obtain materials with a variety of different electronic properties."
Prior to this, some people have turned the graphene layer into thin strips to make it into a semiconductor, but this will greatly weaken its electrical properties. The new method will not suffer such a loss, but the current energy gap is still not practical, and further improvement is expected to become a new material for manufacturing transistors.
In addition, the MIT team has discovered an interesting physical phenomenon in new materials: when exposed to a magnetic field, it presents a fractal trait, the so-called "Hofstadt Butterfly Spectrum". The phenomenon of theoretical prophecy a decade ago was once thought to be impossible.
Create the future of technology: graphene manufacturing new transistors
Abstract Graphene has been fascinated by scientists since its inception more than a decade ago. This carbon material with only one atomic thickness has excellent electronic properties, strength, ultra-light weight, and its use is constantly expanding, but how to implant its energy gap (band...
Graphene has been fascinating to scientists since its inception more than a decade ago. This carbon material with only one atomic thickness has excellent electronic properties, strength, ultra-light weight, and its application is expanding, but how to implant its energy gap (band gap/semiconductor or insulator valence band tip to conduction band) The energy gap at the bottom, which makes transistors and other electronic devices, keeps researchers at a loss.