Schematic structure of diamond: H surface undergoes different ALD processes and its resulting interface electronic properties with diamond; H / MoO3 and diamond: H / HyMoO3-x transistors. (A) Applying a typical MoO3 ALD process on diamond: H causes surface termination degradation. (B and C) Improved ALD processes for MoO3 and HyMoO3-x for diamond. Image source: Science Advances (2018) Replacing traditional crystalline metals with diamonds will help develop next-generation engines for cars and spacecraft. A team of researchers at the Australian National University has developed a new ultra-thin transistor (based on diamond material) that is more durable and has superior performance to components used in high-radiation environments such as rockets or automotive engines. Valve 4 Way,4 Way Reversing Valve,Four Way Reversing Valve,4 Way Valve Assembly Suzhou Green New Material Technology Co., Ltd. , https://www.glooptube.com
Dr. Zongyou Yin of the Australian National University's Institute of Chemistry said in a statement: "In terms of application performance and durability, diamond is the ideal transistor material in the cosmic ray bombardment environment in space or in the extremely hot environment of automotive engines. â€
According to Yin, applications such as automotive engines and spacecraft currently use silicon carbide (SiC) and gallium nitride (GaN) materials to make transistors, but these compounds typically have limited performance in extremely high power and high temperature environments.
Yin explains: "Diamond is a high-quality transistor material for these extreme conditions compared to silicon carbide and gallium nitride. The material used in these high-energy applications (spacecraft and automotive engines) will be scientific and technological. A huge improvement."
Researchers have modified the surface of tiny flat diamonds of a particular shape, which allows them to grow ultra-thin materials on top to make transistors. The new material consists of hydrogen atom deposits and a hydrogenated molybdenum oxide layer.
According to the study, diamond-based 2D electron technology is entering a new era by using transition metal oxides (TMOs) as surface receptors rather than previously used unstable receptors.
The authors write: "As we increase the demand for higher performance electronic devices such as power, frequency, energy efficiency and form factor, there is an urgent need to find new semiconductors that are more ideally substituted for features. In some newly discovered semiconductors. More efficient and simplified doping methods are becoming more common, such as charge transfer doping. We have developed a new method for synthesizing smooth, uniform and ultra-stable TMO surfaces with tunable electronic properties. A thin layer of receptors for excellent 2D electrostatic matching on diamonds."
Diamond transistors are currently in the proof of concept phase .
He said: "We expect that we can use diamond transistor technology for large-scale manufacturing in three to five years, which will lay the foundation for further commercial market development."
Australian National University: Diamond Transistors promote the development of next-generation engines for cars and rockets
Abstract The schematic structure of diamond: H surface undergoes different ALD processes and its interface electronic properties and diamond; H/MoO3 and diamond: H/HyMoO3-x transistors. (A) Applying a typical MoO3ALD process on diamond: H leads to a table...